MBRB1545CTT4G ON Semiconductor

MBRB1545CTG, SBRB1545CTG S witch-mode Power Rectifier 2 D PAK Surface Mount Power Package MBRB1545CTG, SBRB1545CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 7.5 A F(AV) (Rated V , T = 167C) Total Device 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 166C) 15 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance C/W Junction to Case R 2.0 JC Junction to Ambient (Note 2) R 50 JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 7.5 Amps, T = 125C) 0.57 F J (i = 15 Amps, T = 125C) 0.72 F J (i = 15 Amps, T = 25C) 0.84 F J Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 125C) 15 J (Rated dc Voltage, T = 25C) 0.1 J 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.