MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G Switch-mode Power Rectifier www.onsemi.com 100 V, 60 A SCHOTTKY BARRIER Features and Benefits RECTIFIER Low Forward Voltage: 0.72 V 125C 60 AMPERES, 100 VOLTS Low Power Loss/High Efficiency High Surge Capacity 1 175C Operating Junction Temperature 2, 4 3 60 A Total (30 A Per Diode Leg) NRVB Prefix for Automotive and Other Applications Requiring 4 MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAM Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant TO220 Applications CASE 221A Power Supply Output Rectification AYWW STYLE 6 B60H100G Power Management A K A 1 Instrumentation 2 3 Mechanical Characteristics: Case: Epoxy, Molded 2 D PAK3 AYWW CASE 418B Epoxy Meets UL 94 V0 0.125 in B60H100G STYLE 3 AKA Weight (Approximately): 1.9 Grams (TO220) 2 1.7 Grams (D PAK3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: A = Assembly Location Y = Year 260C Max. for 10 Seconds WW = Work Week ESD Rating: Human Body Model = 3B B60H100 = Device Code Machine Model = C G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping MBR60H100CTG TO220 50 Units/Rail (PbFree) 2 MBRB60H100CTT4G D PAK3 800/ (PbFree) Tape & Reel 2 NRVBB60H100CTT4G D PAK3 800/ (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2017 Rev. 7 MBR60H100CT/DMBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 155C) Per Diode 30 C Per Device 60 Peak Repetitive Forward Current I 60 A FRM (Square Wave, 20 kHz, T = 151C) C Nonrepetitive Peak Surge Current I 350 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Range (Note 1) T 55 to +175 C J Storage Temperature Range T 65 to +175 C stg Voltage Rate of Change (Rated V ) dV/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 9 and 10) W 400 mJ AVAL ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase (Min. Pad) R 1.0 JC JunctiontoAmbient (Min. Pad) R 70 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 30 A, T = 25C) 0.80 0.84 F J (i = 30 A, T = 125C) 0.68 0.72 F J (i = 60 A, T = 25C) 0.93 0.98 F J (i = 60 A, T = 125C) 0.81 0.84 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 125C) 2.0 10 J (Rated DC Voltage, T = 25C) 0.0013 0.01 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2