MBRS320P, MBRS330P,
MBRS340P
Surface Mount
Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
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epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
SCHOTTKY BARRIER
as free wheeling and polarity protection diodes, in surface mount
RECTIFIERS
applications where compact size and weight are critical to the system.
3.0 AMPERES
20, 30, 40 VOLTS
Features
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
SMC 2LEAD
(0.5 V Max @ 3.0 A, T = 25C)
CASE 403AC
J
Excellent Ability to Withstand Reverse Avalanche Energy Transients
MARKING DIAGRAM
Guard-Ring for Stress Protection
Device Passes ISO 7637 Pulse #1
AYWW
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
B3x
Compliant
Mechanical Characteristics
B3x = Device Code
x = 2, 3 or 4
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
A = Assembly Location*
Weight: 217 mg (Approximately)
Y = Year
Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week
= PbFree Package
Leads are Readily Solderable
(Note: Microdot may be in either location)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
Cathode Polarity Band
stamped in the package, the front side assembly
Device Meets MSL 1 Requirements
code may be blank.
ESD Ratings:
Machine Model = C (> 400 V)
ORDERING INFORMATION
Human Body Model = 3B (> 8000 V)
Device Package Shipping
MBRS320PT3G SMC 2Lead 2,500 /
(PbFree) Tape & Reel
MBRS330PT3G SMC 2Lead 2,500 /
(PbFree) Tape & Reel
MBRS340PT3G SMC 2Lead 2,500 /
(PbFree) Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number:
August, 2017 Rev. 2 MBRS320P/DMBRS320P, MBRS330P, MBRS340P
MAXIMUM RATINGS
Rating Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit
Peak Repetitive Reverse Voltage V 20 30 40 V
RRM
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
Average Rectified Forward Current I 3.0 @ T = 110C A
F(AV) L
4.0 @ T = 105C
L
Nonrepetitive Peak Surge Current I A
FSM
(Surge applied at rated load conditions halfwave, 80
single phase, 60 Hz)
Operating Junction Temperature T 65 to +150 C
J
ISO 7637 Pulse #1 Pulses
(100 V, 10) 5000
ESD Ratings: V
Machine Model = C > 400
Human Body Model = 3B > 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoLead R 11 C/W
JL
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1) V V
F
(i = 3.0 A, T = 25C) 0.50
F J
Maximum Instantaneous Reverse Current (Note 1) i mA
R
(Rated dc Voltage, T = 25C) 2.0
J
(Rated dc Voltage, T = 100C) 20
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10 10
T = 100C T = 100C
T = 125C T = 125C
J J
J J
1 1
T = 25C T = 25C
J J
T = 40C T = 40C
J J
T = 65C
T = 65C
J
J
0.1 0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
F F
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
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2
i , INSTANTANEOUS FORWARD
F
CURRENT (AMPS)
i , INSTANTANEOUS FORWARD
F
CURRENT (AMPS)