Product Information

MC74HC245ADTG

MC74HC245ADTG electronic component of ON Semiconductor

Datasheet
Bus Transceivers 2-6V Octal 3-State Non-Inverting Bus

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4969 ea
Line Total: USD 1.5

441 - Global Stock
Ships to you by
Mon. 29 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
218 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

MC74HC245ADTG
ON Semiconductor

1 : USD 0.988
3 : USD 0.9451
10 : USD 0.8944
25 : USD 0.7228
29 : USD 0.5512

441 - Global Stock


Ships to you by Mon. 29 Apr

MOQ : 1
Multiples : 1

Stock Image

MC74HC245ADTG
ON Semiconductor

1 : USD 1.4969
25 : USD 0.7484
50 : USD 0.6736
75 : USD 0.5613
100 : USD 0.5052

     
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MC74HC245A Octal 3-State Noninverting Bus Transceiver HighPerformance SiliconGate CMOS The MC74HC245A is identical in pinout to the LS245. The device MC74HC245A FUNCTION TABLE Control Inputs Output Enable Direction Operation L L Data Transmitted from Bus B to Bus A L H Data Transmitted from Bus A to Bus B H X Buses Isolated (HighImpedance State) X = dont care MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to V + 0.5 V IN CC V DC Output Voltage (Note 2) 0.5 to V + 0.5 V OUT CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 35 mA OK I DC Output Sink Current 35 mA OUT I DC Supply Current per Supply Pin 75 mA CC I DC Ground Current per Ground Pin 75 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J Thermal Resistance SOIC 96 C/W JA TSSOP 128 P Power Dissipation in Still Air at 85 C SOIC 500 mW D TSSOP 450 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 30% to 35% UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 3) 2000 V ESD Machine Model (Note 4) 200 Charged Device Model (Note 5) 1000 I Latchup Performance Above V and Below GND at 85 C (Note 6) 300 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 20 ounce copper trace with no air flow. 2. I absolute maximum rating must observed. O 3. Tested to EIA/JESD22A114A. 4. Tested to EIA/JESD22A115A. 5. Tested to JESD22C101A. 6. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 1) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

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