MC74VHCT08A Quad 2-Input AND Gate The MC74VHCT08A is an advanced high speed CMOS 2input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The VHCT inputs are compatible with TTL levels. This device can www.onsemi.com be used as a level converter for interfacing 3.3 V to 5.0 V, because it has full 5.0 V CMOS level output swings. MARKING The VHCT08A input structures provide protection when voltages DIAGRAMS between 0 V and 5.5 V are applied, regardless of the supply voltage. 14 The output structures also provide protection when V = 0 V. These CC SOIC14 VHCT08AG input and output structures help prevent device destruction caused by D SUFFIX AWLYWW supply voltage input/output voltage mismatch, battery backup, hot CASE 751A 1 insertion, etc. 1 The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The 14 inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V VHCT TSSOP14 systems to 3.0 V systems. 08A DT SUFFIX ALYW CASE 948G 1 Features 1 High Speed: t = 4.3 ns (Typ) at V = 5 V PD CC A = Assembly Location Low Power Dissipation: I = 2 A (Max) at T = 25C CC A WL, L = Wafer Lot TTLCompatible Inputs: V = 0.8 V V = 2.0 V IL IH Y, YY = Year Power Down Protection Provided on Inputs WW, W = Work Week G or = PbFree Package Balanced Propagation Delays (Note: Microdot may be in either location) Designed for 2 V to 5.5 V Operating Range Low Noise: V = 0.8 V (Max) OLP Pin and Function Compatible with Other Standard Logic Families ORDERING INFORMATION See detailed ordering and shipping information in the package Latchup Performance Exceeds 300 mA dimensions section on page 4 of this data sheet. ESD Performance: Human Body Model > 2000 V, Machine Model > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 9 MC74VHCT08A/DMC74VHCT08A 1 V B4 A4 Y4 B3 A3 Y3 CC A1 3 Y1 14 13 12 11 10 9 8 2 B1 4 A2 6 Y2 5 B2 Y = AB 9 A3 8 Y3 10 1 2 34567 B3 A1 B1 Y1 A2 B2 Y2 GND 12 A4 (Top View) 11 Y4 13 Figure 2. Pinout: 14Lead Packages B4 Figure 1. Logic Diagram FUNCTION TABLE Inputs Output AB Y L L L L H L H L L H H H MAXIMUM RATINGS Rating Symbol Value Unit This device contains protection circuitry to guard against damage DC Supply Voltage V 0.5 to +7.0 V CC due to high static voltages or electric DC Input Voltage V 0.5 to +7.0 V fields. However, precautions must in be taken to avoid applications of any DC Output Voltage V 0.5 to V +0.5 V out CC voltage higher than maximum rated Input Diode Current I 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in Output Diode Current I 20 mA OK V should be constrained to the out DC Output Current, per Pin I 25 mA range GND (V or V ) V . out in out CC Unused inputs must always be DC Supply Current, V and GND Pins I 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). Power Dissipation in Still Air, SOIC Packages P 500 mW CC D TSSOP Package 450 Unused outputs must be left open. Storage Temperature T 65 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Packages: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage V 4.5 5.5 V CC DC Input Voltage V 0 5.5 V in DC Output Voltage V 0 V V out CC Operating Temperature T 40 + 125 C A Input Rise and Fall Time V = 5.0 V 0.5 V t , t 0 20 ns/V CC r f Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2