LOTNo. LOTNo. MCH3374 Power MOSFET 12V, 70m , 3A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology,which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 70m 4.5V High Speed Switching 12V 115m 2.5V 3A 1.8V drive 215m 1.8V Pb-Free and RoHS compliance Halogen Free compliance : MCH3374-TL-W ELECTRICAL CONNECTION Typical Applications P-Channel Load Switch 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Drain to Source Voltage V 12 V DSS 1 1:Gate Gate to Source Voltage V 8V GSS 2:Source 3:Drain Drain Current (DC) I 3A D Drain Current (Pulse) 2 I 12 DP A PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.0 D W 2 (900mm 0.8mm) Junction Temperature Tj 150 C QF Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to ESD immunity<200V*, so please take care when ORDERING INFORMATION handling. See detailed ordering and shipping *Machine Model information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient R 125 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 MCH3374/D MCH3374 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V =0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =6.4V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =6V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =6V, I =1.5A 2.7 4.5 S FS DS D R (on)1 I =1.5A, V =4.5V 54 70m DS D GS Static Drain to Source On-State 80 115 R (on)2 I =0.8A, V =2.5V m DS D GS Resistance R (on)3 I =0.3A, V =1.8V 125 215 m DS D GS Input Capacitance Ciss 405 pF Output Capacitance Coss 145 pF V =6V, f=1MHz DS Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time t (on) 8.8 ns d Rise Time t 80 ns r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time 50 ns t f Total Gate Charge Qg 5.6 nC Gate to Source Charge Qgs 0.7 nC V =6V, V =4.5V, I =3A DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V SD I =3A, V=0V 0.85 1.2 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --6V V IN DD 0V --4.5V I =--1.5A D V IN R =4 L D V OUT PW=10s D.C.1% G MCH3374 P.G 50 S www.onsemi.com 2