LOTNo. LOTNo. MCH3382 Power MOSFET 12V, 198m , 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge www.onsemi.com driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.2V drive 198m 4.5V Pb-Free, Halogen Free and RoHS compliance 297m 2.5V 12V 2A 429m 1.8V Typical Applications 1040m 1.2V Load Switch ELECTRICAL CONNECTION SPECIFICATIONS P-Channel ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit 3 Drain to Source Voltage V 12 V DSS Gate to Source Voltage V 9V GSS Drain Current (DC) I 2A D Drain Current (Pulse) 1 I 8 A DP 1:Gate PW 10s, duty cycle 1% 2:Source Power Dissipation 3:Drain When mounted on ceramic substrate P 0.8 W D 2 2 (900mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C PACKING TYPE : TL MARKING Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. QP 2 : This product is designed to ESD immunity<200V*, so please take care when handling. TL *Machine Model THERMAL RESISTANCE RATINGS ORDERING INFORMATION Parameter SymbolValue Unit See detailed ordering and shipping Junction to Ambient information on page 5 of this data sheet. R 156.2 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 1 MCH3382/D MCH3382 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =7.2V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =6V, I =1mA 0.3 0.9 V GS DS D Forward Transconductance g V =6V, I =1A 3 S FS DS D R (on)1 I =1A, V =4.5V 152 198m DS D GS 212 297 R (on)2 I =0.5A, V =2.5V m Static Drain to Source On-State DS D GS Resistance R (on)3 I =0.3A, V =1.8V 286 429 m DS D GS R (on)4 I =0.1A, V =1.2V 520 1040 m DS D GS Input Capacitance Ciss 170 pF Output Capacitance Coss 50 pF V =6V, f=1MHz DS Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time t (on) 4.8 ns d Rise Time 11 ns t r See specified Test Circuit Turn-OFF Delay Time 23 ns t (off) d Fall Time t 14 ns f Total Gate Charge Qg 2.3 nC Gate to Source Charge Qgs 0.40 nC V =6V, V =4.5V, I =2A DS GS D Gate to Drain Miller Charge Qgd 0.46 nC V Forward Diode Voltage SD I =2A, V=0V 0.85 1.2 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--6V IN DD 0V -- 4.5V I =--1A D V IN R =6 L D V OUT PW=10s D.C.1% G MCH3382 P.G 50 S www.onsemi.com 2