Product Information

MCH6321-TL-E

MCH6321-TL-E electronic component of ON Semiconductor

Datasheet
MOSFET SWITCHING DEVICE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

667: USD 0.1818 ea
Line Total: USD 121.26

2905 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 667  Multiples: 1
Pack Size: 1
Availability Price Quantity
2905 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 667
Multiples : 1

Stock Image

MCH6321-TL-E
ON Semiconductor

667 : USD 0.1818

2804 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

MCH6321-TL-E
ON Semiconductor

1 : USD 0.5635
10 : USD 0.4818
100 : USD 0.3393
500 : USD 0.2737
1000 : USD 0.2277
3000 : USD 0.2219
9000 : USD 0.2093
24000 : USD 0.2047
45000 : USD 0.2024

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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LOT No. LOT No. Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET MCH6321 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2A 2.5 4.3 S DS D R (on)1 I =--2A, V =--4.5V 63 83 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--2.5V 88 125 m DS D GS R (on)3 I =--0.2A, V =--1.8V 130 200 m DS D GS Input Capacitance Ciss 375 pF Output Capacitance Coss V =--10V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss 58 pF Turn-ON Delay Time t (on) 8.1 ns d Rise Time t 31 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 40 ns d Fall Time t 39 ns f Total Gate Charge Qg 4.6 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--4A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.3 nC Diode Forward Voltage V I =--4A, V =0V --0.86 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --10V V IN DD 0V --4V I = --2A D V IN R =5 L D V OUT PW=10s D.C.1% G MCH6321 P.G 50 S Ordering Information Device Package Shipping memo MCH6321-TL-E Pb-Free MCPH6 3,000pcs./reel MCH6321-TL-W Pb-Free and Halogen Free No. A0963-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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