Product Information

MCH6321-TL-W

MCH6321-TL-W electronic component of ON Semiconductor

Datasheet
MOSFET Single P-Channel Power MOSFET, -20V, -4A, 83mO

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2914
Multiples : 2914

Stock Image

MCH6321-TL-W
ON Semiconductor

2914 : USD 0.1443
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

MCH6321-TL-W
ON Semiconductor

1 : USD 0.3902
10 : USD 0.2911
100 : USD 0.158
1000 : USD 0.1192
3000 : USD 0.1019
9000 : USD 0.0963
24000 : USD 0.0947
45000 : USD 0.0937
99000 : USD 0.0895
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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LOT No. LOT No. Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET MCH6321 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2A 2.5 4.3 S DS D R (on)1 I =--2A, V =--4.5V 63 83 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--2.5V 88 125 m DS D GS R (on)3 I =--0.2A, V =--1.8V 130 200 m DS D GS Input Capacitance Ciss 375 pF Output Capacitance Coss V =--10V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss 58 pF Turn-ON Delay Time t (on) 8.1 ns d Rise Time t 31 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 40 ns d Fall Time t 39 ns f Total Gate Charge Qg 4.6 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--4A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.3 nC Diode Forward Voltage V I =--4A, V =0V --0.86 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --10V V IN DD 0V --4V I = --2A D V IN R =5 L D V OUT PW=10s D.C.1% G MCH6321 P.G 50 S Ordering Information Device Package Shipping memo MCH6321-TL-E Pb-Free MCPH6 3,000pcs./reel MCH6321-TL-W Pb-Free and Halogen Free No. A0963-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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