LOTNo. LOTNo. MCH6336 Power MOSFET www.onsemi.com 12V, 43m , 5A, Single P-Channel Features V R (on) Max I DSS DS D Max Low On-Resistance 43m 4.5V 1.8V Drive 12V 66m 2.5V 5A High Speed Switching 98m 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Halogen Free Compliance : MCH6336-TL-H, MCH6336-TL-W Electrical Connection P-Channel Specifications 1,2,5,6 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 12 V DSS 1:Drain Gate to Source Voltage V 10 V GSS 3 2:Drain Drain Current (DC) I 5A D 3:Gate 4:Source Drain Current (Pulse) A 5:Drain I 20 DP PW10s, duty cycle1% 6:Drain 4 Power Dissipation When mounted on ceramic substrate P 1.5 W D 2 (1200mm 0.8mm) Packing Type : TL Marking Junction Temperature Tj 150 C C Storage Temperature Tstg 55 to +150 YK Thermal Resistance Ratings TL Parameter Symbol Value Unit Junction to Ambient C/W When mounted on ceramic substrate R 83.3 JA 2 (1200mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 2 MCH6336/D MCH6336 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 12 V BR DSS D GS Zero-Gate Voltage Drain Current I V =12V, V=0V 10 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =6V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =6V, I =3A 4.8 8.1 S FS DS D R(on)1 I =3A, V =4.5V 33 43m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V =2.5V 47 66m DS D GS R(on)3 I =0.5A, V =1.8V 68 98m DS D GS Input Capacitance Ciss 660 pF Output Capacitance Coss V =6V, f=1MHz 210 pF DS Reverse Transfer Capacitance Crss 155 pF Turn-ON Delay Time t (on) 7.4 ns d Rise Time t 57 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 72 ns d Fall Time t 69 ns f Total Gate Charge Qg 6.9 nC Gate to Source Charge Qgs V =6V, V =4.5V, I =5A 1.2 nC DS GS D Gate to Drain Miller Charge Qgd 1.8 nC Forward Diode Voltage V I =5A, V=0V 0.83 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =--6V V IN DD 0V --4.5V I =--3A D V IN R =2 L D V OUT PW=10s D.C.1% G MCH6336 P.G 50 S www.onsemi.com 2