Product Information

MCH6341-TL-H

MCH6341-TL-H electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET PCH 4V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1781
Multiples : 1781

Stock Image

MCH6341-TL-H
ON Semiconductor

1781 : USD 0.261
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

MCH6341-TL-H
ON Semiconductor

1 : USD 0.4905
10 : USD 0.3668
100 : USD 0.2302
1000 : USD 0.1723
3000 : USD 0.1473
24000 : USD 0.1434
45000 : USD 0.1369
99000 : USD 0.1325
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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LOT No. LOT No. Ordering number : ENA1272B MCH6341 Power MOSFET MCH6341 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =--10V, I =--1mA --1.2 --2.6 V GS DS D g Forward Transconductance V =--10V, I =--3A 2.8 4.8 S FS DS D R (on)1 I =--3A, V =--10V 45 59 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1.5A, V =--4.5V 71 100 m DS D GS R (on)3 I =--1.5A, V =--4V 82 115 m DS D GS Input Capacitance Ciss 430 pF Output Capacitance Coss V =--10V, f=1MHz 105 pF DS Reverse Transfer Capacitance Crss 75 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 26 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 45 ns d Fall Time t 35 ns f Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--5A 2.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.5 nC Forward Diode Voltage V I =--5A, V =0V --0.87 --1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --15V V IN DD 0V --10V I = --3A D V IN R =5 L V OUT PW=10s D.C.1% MCH6341 P.G 50 Ordering Information Device Package Shipping memo MCH6341-TL-E MCPH6 3,000pcs./reel Pb Free MCH6341-TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free MCH6341-TL-W MCPH6 3,000pcs./reel Pb Free and Halogen Free No. A1272-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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