MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for halfwave ac control applications, such as MCR12LD, MCR12LM, MCR12LN THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 C/W JC Junction toAmbient 62.5 R JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current T = 25C I , 0.01 mA J DRM (V = Rated V and V Gate Open) T = 125C I 2.0 D DRM RRM J RRM ON CHARACTERISTICS Peak Forward On State Voltage (Note 2) V 2.2 V TM (I = 24 A) TM Gate Trigger Current (Continuous dc) I 2.0 4.0 8.0 mA GT (V = 12 V, R = 100 ) D L Holding Current I 4.0 10 20 mA H (V = 12 V, Gate Open, Initiating Current = 200 mA) D Latch Current (V = 12 V, Ig = 20 mA) I 6.0 12 30 mA D L Gate Trigger Voltage (Continuous dc) V 0.5 0.65 0.8 V GT (V = 12 V, R = 100 ) D L DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt 100 250 V/ s (V = Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Critical Rate of Rise of OnState Current di/dt 50 A/ s IPK = 50 A Pw = 40 sec diG/dt = 1 A/ sec, Igt = 50 mA 2. Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 2%.