Product Information

MCR8DSNT4G

MCR8DSNT4G electronic component of ON Semiconductor

Datasheet
Thyristor SCR 800V 90A 3-Pin(2+Tab) DPAK T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.479 ea
Line Total: USD 1197.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2500
Multiples : 2500

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MCR8DSNT4G
ON Semiconductor

2500 : USD 0.479

     
Manufacturer
Product Category
Packaging
Gate Trigger Current
Gate Trigger Voltage
Mounting
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Reverse Gate Voltage
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Average On-State Current
Pin Count
Type
Off-State Voltage
Operating Temperature Classification
On State Voltage Max
Hold Current
Rad Hardened
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MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer MCR8DSM, MCR8DSN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoCase R 2.2 C/W JC JunctiontoAmbient R 88 JA JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I A DRM (V = Rated V or V R = 1.0 k ) (Note 3) T = 25C I 10 AK DRM RRM GK J RRM T = 110C 500 J ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (I = 10 A) V 10 12.5 18 V GR GRM Peak Reverse Gate Blocking Current (V = 10 V) I 1.2 A GR RGM Peak Forward OnState Voltage (Note 4) (I = 16 A) V 1.4 1.8 V TM TM Gate Trigger Current (Continuous dc) (Note 5) I A GT (V = 12 V, R = 100 )T = 25C 5.0 12 200 D L J T = 40C 300 J Gate Trigger Voltage (Continuous dc) (Note 5) V V GT (V = 12 V, R = 100 )T = 25C 0.45 0.65 1.0 D L J T = 40C 1.5 J T = 110C 0.2 J Holding Current I mA H (V = 12 V, Initiating Current = 200 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D GK J T = 40C 10 J Latching Current I mA L (V = 12 V, I = 2.0 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D G GK J T = 40C 10 J Total TurnOn Time tgt s (Source Voltage = 12 V, R = 6.0 k , I = 16 A(pk), R = 1.0 k ) 2.0 5.0 S T GK (V = Rated V , Rise Time = 20 ns, Pulse Width = 10 s) D DRM DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt V/ s (V = 0.67 X Rated V , Exponential Waveform, 2.0 10 D DRM R = 1.0 k , T = 110C) GK J 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or R = 1.0 k . Devices shall not have a positive gate voltage concurrently with a negative voltage GK on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 5. R current not included in measurements. GK ORDERING INFORMATION Device Package Shipping MCR8DSMT4 DPAK DPAK MCR8DSMT4G (Pb Free) 2500 / Tape & Reel MCR8DSNT4 DPAK MCR8DSNT4G DPAK (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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ON Semicon
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