TN1205H-6G STMicroelectronics

TN1205H-6G electronic component of STMicroelectronics
TN1205H-6G STMicroelectronics
TN1205H-6G SCRs
TN1205H-6G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN1205H-6G SCRs across the USA, India, Europe, Australia, and various other global locations. TN1205H-6G SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. TN1205H-6G
Manufacturer: STMicroelectronics
Category: SCRs
Description: STMicroelectronics SCRs 12A High Temp SCR 600V Vdrm 2 to 5mA
Datasheet: TN1205H-6G Datasheet (PDF)
Price (USD)
3000: USD 0.3718 ea
Line Total: USD 1115.4 
Availability : 0
  
QtyUnit Price
3000$ 0.3718
5000$ 0.3608
10000$ 0.352

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 3000
Multiples : 1000
QtyUnit Price
3000$ 0.4691
4000$ 0.4649
5000$ 0.4605
6000$ 0.4561
10000$ 0.4519
15000$ 0.4475
20000$ 0.4431
25000$ 0.4387
50000$ 0.4344


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3718
5000$ 0.3608
10000$ 0.352


Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3081
3$ 1.0177
10$ 0.9159
24$ 0.6649
65$ 0.6242

   
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We are delighted to provide the TN1205H-6G from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1205H-6G and other electronic components in the SCRs category and beyond.

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TN1205H Datasheet High temperature 12 A SCRs Features A High junction temperature: T = 150 C j G Medium current SCRs K A High noise immunity up to 150 C A RoHS (2002/95/EC) compliant 600 V V , V DRM RRM K A K A G G Applications DPAK TO-220AB General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in standard gate triggering levels, the TN1205H SCR series has very high switching capability up to a junction temperature of 150 C. These products fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush Product status link current limiting circuits, capacitive discharge ignition and voltage regulation circuits. TN1205H These products are particulary adapted for use in areas where the ambient temperature is high or the ventilation low, or where an increase of power density is Product summary required. Through-hole or surface-mount packages provide performance in a limited space V , V 600 V DRM RRM area. I 2 to 5 mA GT DS7117 - Rev 5 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN1205H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle)) 12 T(RMS) 2 D PAK, T = 136 C A c TO-220AB I Average on-state current (180 conduction angle) 7.6 T(AV) t = 8.3 ms 126 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 120 p 2 2 2 t = 10 ms 72 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns, F = 60 Hz T = 150 C 100 A/s G GT j V / V /V DSM DRM RRM t = 10 ms Non Repetitive peak off-state voltage V p V +100 RSM I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit Max. 2 (1) I mA GT V = 12 V, R = 33 Max. 5 D L V Max. 1.3 V GT V V = V , R = 3.3 k GD D DRM L Min. 0.2 V I I = 1.2 x I Max. 40 mA L G GT (2) I I = 500 mA, gate open Max. 20 mA T H T = 125 C 200 j (2) V = 67% V , gate open Min. V/s dV/dt D DRM T = 150 C 100 j t I = 40 A, V = 500 V, I = 100 mA, dI /dt = 5 A/s Typ. 1.9 s gt TM D G G V = 335 V, T =125 C, I = 20 A, V = 25 V, (dI /dt) = 30 A/s, dV /dt = 50 DM j TM R T Max D t Typ. 65 s q V/s, R = 100 GK 1. Minimum I is guaranteed at 20% of I max. GT GT 2. For both polarities of A2 referenced to A1. DS7117 - Rev 5 page 2/14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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