TN1610H-6FP Datasheet High temperature 16 A 600 V TO220FP thyristor SCRs A Features High junction temperature: T = 150 C j High noise immunity dV/dt = 1000V/s up to 150 C G Gate triggering current I = 10 mA GT K Peak off-state voltage V /V = 600 V DRM RRM High turn-on current rise dI/dt = 100 A/s ECOPACK 2 compliant G Complies with UL standards (File ref: E81734) A K Insulated package TO-220FPAB: TO-220FPAB Insulated voltage: 2000 V RMS Applications Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Light dimmers Solid state relays Description Thanks to a junction temperature T up to 150 C and an isolated TO-220FPAB j Product status package, the TN1610H-6FP offers high thermal performance operation up to 16 A TN1610H-6FP rms. The trade-off between the devices noise immunity (dV/dt = 1 kV/s), its gate Product summary triggering current (I = 10 mA) and its turn-on current rise (dI/dt = 100 A/s) allows GT Order code TN1610H-6FP the design of robust and compact control circuits for voltage regulators in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power Package TO-220FPAB tools and kitchen appliances and inrush current limiting circuits. V /V 600 V DRM RRM The insulated fullpack package allows a back-to-back configuration. I 10 mA GT DS10900 - Rev 2 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN1610H-6FP Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I T = 83 C RMS on-state current (180 conduction angle) 16 A T(RMS) c T = 83 C 10 c I T = 102 C Average on-state current (180 conduction angle) 8 A T(AV) c T = 117 C 6 c t = 8.3 ms 153 p I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j t = 10 ms 140 p 2 2 2 I t value for fusing, (T initial = 25 C) t = 10 ms 98 I t p A s j I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz 100 A/s Critical rate of rise of on-state current V /V Repetitive peak off-state voltage 600 V DRM RRM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C l V Insulation rms voltage, 1 minute, TO-220FPAB 2000 V ins Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Typ. 4.5 I mA GT V = 12 V, R = 33 Max. 10 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 30 mA H T I I = 1.2 x I Max. 60 mA L G GT dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j t I = 32 A, V = 600 V, I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G t I = 32 A, V = 402 V, (dl /dt)OFF = 30 A/s, V = 25 V, dV /dt = 40 V/s T = 150 C Typ. 70 s q T D T R D j DS10900 - Rev 2 page 2/10