Product Information

MJ15022G

MJ15022G electronic component of ON Semiconductor

Datasheet
Bipolar Transistors - BJT 16A 200V 250W NPN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 6.9802 ea
Line Total: USD 13.96

116 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
116 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2
Multiples : 1

Stock Image

MJ15022G
ON Semiconductor

2 : USD 7.3486
10 : USD 6.4423
25 : USD 5.4854
50 : USD 5.3757

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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MJ15022 (NPN), MJ15024 (NPN) Silicon Power Transistors The MJ15022 and MJ15024 are power transistors designed for high power audio, disk head positioners and other linear applications. MJ15022 (NPN), MJ15024 (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V CEO(sus) (I = 100 mAdc, I = 0) MJ15022 C B 200 MJ15024 250 Collector Cutoff Current I Adc CEX (V = 200 Vdc, V = 1.5 Vdc) MJ15022 CE BE(off) 250 (V = 250 Vdc, V = 1.5 Vdc) MJ15024 CE BE(off) 250 Collector Cutoff Current I Adc CEO (V = 150 Vdc, I = 0) MJ15022 CE B 500 (V = 200 vdc, I = 0) MJ15024 CE B 500 Emitter Cutoff Current I 500 Adc EBO (V = 5 Vdc, I = 0) CE B SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 0.5 s (nonrepetitive)) CE 5 (V = 80 Vdc, t = 0.5 s (nonrepetitive)) CE 2 ON CHARACTERISTICS DC Current Gain h FE (I = 8 Adc, V = 4 Vdc) C CE 15 60 (I = 16 Adc, V = 4 Vdc) C CE 5 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) C B 1.4 (I = 16 Adc, I = 3.2 Adc) C B 4.0 BaseEmitter On Voltage V 2.2 Vdc BE(on) (I = 8 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 100 There are two limitations on the powerhandling ability of 50 a transistor: average junction temperature and second T = 25C C breakdown. Safe operating area curves indicate I V C CE 20 limits of the transistor that must be observed for reliable 10 operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 5.0 The data of Figure 1 is based on T = 200 C T is J(pk) C BONDING WIRE LIMITED variable depending on conditions. At high case THERMAL LIMITATION 1.0 (SINGLE PULSE) temperatures, thermal limitations will reduce the power that SECOND BREAKDOWN can be handled to values Ion than the limitations imposed by LIMITED second breakdown. 0.2 0.1 0.1 0.2 0.5 10 20 50 100 250 500 1 k V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. ActiveRegion Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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