MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 50 mAdc, I = 0) C B MJE700G, MJE800G 60 MJE702G, MJE703G, MJE802G, MJE803G 80 Collector Cutoff Current I Adc CEO (V = 60 Vdc, I = 0) CE B MJE700G, MJE800G 100 (V = 80 Vdc, I = 0) CE B MJE702G, MJE703G, MJE802G, MJE803G 100 Collector Cutoff Current I Adc CBO (V = Rated BV , I = 0) 100 CB CEO E (V = Rated BV , I = 0, T = 100 C) 500 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 1.5 Adc, V = 3.0 Vdc) C CE MJE700G, MJE702G, MJE800G, MJE802G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE MJE703G, MJE803G 750 (I = 4.0 Adc, V = 3.0 Vdc) C CE All devices 100 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.5 Adc, I = 30 mAdc) C B MJE700G, MJE702G, MJE800G, MJE802G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B MJE703G, MJE803G 2.8 (I = 4.0 Adc, I = 40 mAdc) C B All devices 3.0 BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE MJE700G, MJE702G, MJE800G, MJE802G 2.5 (I = 2.0 Adc, V = 3.0 Vdc) C CE MJE703G, MJE803G 2.5 (I = 4.0 Adc, V = 3.0 Vdc) C CE All devices 3.0 DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 40 30 20 10 0 25 50 75 100 125 150 T , CASE TEMPERATURE (C) C Figure 1. Power Derating