MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for generalpurpose amplifier and switching applications, MJF15030 (NPN), MJF15031 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V 150 Vdc CEO(sus) (I = 10 mAdc, I = 0) C B Collector Cutoff Current I 10 Adc CEO (V = 150 Vdc, I = 0) CE B Collector Cutoff Current I 10 Adc CBO (V = 150 Vdc, I = 0) CB E Emitter Cutoff Current I 10 Adc EBO (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) DC Current Gain (I = 0.1 Adc, V = 2 Vdc) h 40 C CE FE (I = 2 Adc, V = 2 Vdc) 40 C CE (I = 3 Adc, V = 2 Vdc) 40 C CE (I = 4 Adc, V = 2 Vdc) 20 C CE Typ DC Current Gain Linearity h 2 FE (V from 2 V to 20 V, I from 0.1 A to 3 A) (NPN to PNP) 3 CE C CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 1 Adc, I = 0.1 Adc) C B BaseEmitter On Voltage V 1 Vdc BE(on) (I = 1 Adc, V = 2 Vdc) C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 4) f 30 MHz T (I = 500 mAdc, V = 10 Vdc, f = 10 MHz) C CE test 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. f = h f . T fe test 1 0.5 0.3 0.2 SINGLE PULSE 0.1 R = r(t) R JC(t) JC T - T = P R (t) J(pk) C (pk) JC 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5152 3 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K t, TIME (ms) Figure 1. Thermal Response