MMBD2837LT1 ON Semiconductor

MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G ELECTRICAL CHARACTERISTICS (EACH DIODE) (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) (BR) MMBD2837LT1G, SMMBD2837LT1G 35 MMBD2838LT1G 75 Reverse Voltage Leakage Current (Note 3.) I Adc R (V = 30 Vdc) R MMBD2837LT1G, SMMBD2837LT1G 0.1 (V = 50 Vdc) R MMBD2838LT1G 0.1 Diode Capacitance (V = 0 V, f = 1.0 MHz) C 4.0 pF R T Forward Voltage V Vdc F (I = 10 mAdc) 1.0 F (I = 50 mAdc) 1.0 F (I = 100 mAdc) 1.2 F Reverse Recovery Time (I = I = 10 mAdc, I = 1.0 mAdc) (Figure 1) t 4.0 ns F R R(REC) rr 3. For each individual diode while the second diode is unbiased. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit