MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes 30 VOLTS These devices are designed primarily for highefficiency UHF and SILICON HOTCARRIER VHF detector applications. They are readily adaptable to many other DETECTOR AND SWITCHING fast switching RF and digital applications. They are supplied in an DIODES inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features Extremely Low Minority Carrier Lifetime 15 ps (Typ) Very Low Capacitance 1.5 pF (Max) V = 15 V R TO92 2Lead SOT23 (TO236) Low Reverse Leakage I = 13 nAdc (Typ) MBD301, MMBD301 CASE 182 R CASE 318 STYLE 1 STYLE 8 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and TO92 SOT23 PPAP Capable 2 1 3 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CATHODE ANODE CATHODE ANODE Compliant MARKING DIAGRAMS MAXIMUM RATINGS Rating Symbol Value Unit MBD 301 Reverse Voltage V 30 V R 4T M AYW Forward Current (DC) I 200 (Max) mA F 1 Total Device Dissipation P F T = 25C MW A MBD301G 280 TO92 SOT23 MMBD301LT1G, MMBD301LT3G, 200 SMMBD301LT3G A = Assembly Location Y = Year Derate above 25C mW/C W = Work Week MBD301G 2.8 4T = Device Code (SOT23) MMBD301LT1G, MMBD301LT3G, 2.0 SMMBD301LT3G M = Date Code* = PbFree Package Operating Junction T 55 to C J (Note: Microdot may be in either location) Temperature Range +125 *Date Code orientation and/or overbar may vary Storage Temperature Range T 55 to C stg depending upon manufacturing location. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: March, 2018 Rev. 9 MBD301/DMBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 15 V, f = 1.0 MHz) Figure 1 0.9 1.5 R Reverse Leakage I nAdc R (V = 25 V) Figure 3 13 200 R Forward Voltage V Vdc F (I = 1.0 mAdc) Figure 4 0.38 0.45 F Forward Voltage V Vdc F (I = 10 mAdc) Figure 4 0.52 0.6 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping MBD301G TO92 5,000 Units / Bulk (PbFree) MMBD301LT1G SOT23 3,000 / Tape & Reel (PbFree) MMBD301LT3G SOT23 10,000 / Tape & Reel (PbFree) SMMBD301LT3G SOT23 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2