X-On Electronics has gained recognition as a prominent supplier of MMBFJ177LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ177LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ177LT1G ON Semiconductor

MMBFJ177LT1G electronic component of ON Semiconductor
MMBFJ177LT1G ON Semiconductor
MMBFJ177LT1G JFET
MMBFJ177LT1G  Semiconductors

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See Product Specifications
Part No. MMBFJ177LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel logic level, AEC-Q101 qualified MOSFET transistor.
Datasheet: MMBFJ177LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.187 ea
Line Total: USD 0.19 
Availability - 97932
Ship by Fri. 23 May to Wed. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26190
Ship by Fri. 16 May to Thu. 22 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1026
6000 : USD 0.0996
9000 : USD 0.0982
12000 : USD 0.0964
27000 : USD 0.0953
51000 : USD 0.0948
102000 : USD 0.0942
150000 : USD 0.0939

97932
Ship by Fri. 23 May to Wed. 28 May
MOQ : 1
Multiples : 1
1 : USD 0.187
10 : USD 0.148
30 : USD 0.128
100 : USD 0.1116
500 : USD 0.0716
1000 : USD 0.0689

3503
Ship by Wed. 14 May to Fri. 16 May
MOQ : 5
Multiples : 1
5 : USD 0.2492
25 : USD 0.2282
100 : USD 0.1988
111 : USD 0.168
304 : USD 0.1596

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
Transistor Type
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Capacitance Ciss Max
Current Idss Max
Current Idss Min
Drain Source Voltage Vds
Operating Temperature Min
Operating Temperature Range
Power Dissipation Pd
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vgs Off Min
Zero Gate Voltage Drain Current Idss
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We are delighted to provide the MMBFJ177LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ177LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ177LT1G is a dual N-channel enhancement mode field effect transistor manufactured by ON Semiconductor. It is designed for low to medium current, low voltage, and low power applications. The transistor has a nomimal drain-source voltage of 20V and Pd power dissipation of 250mW. It also has a low gate-source voltage and can handle a maximum current of 350mA. This part is also RoHS-compliant and meets the requirements for applications that require high resistance to ESD damage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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