MMBFJ177LT1G ON Semiconductor

MMBFJ177LT1G electronic component of ON Semiconductor
MMBFJ177LT1G ON Semiconductor
MMBFJ177LT1G JFET
MMBFJ177LT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBFJ177LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ177LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. MMBFJ177LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel logic level, AEC-Q101 qualified MOSFET transistor.
Datasheet: MMBFJ177LT1G Datasheet (PDF)
Price (USD)
3000: USD 0.1022 ea
Line Total: USD 306.6 
Availability : 17460
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
3000$ 0.1022
6000$ 0.1004
9000$ 0.0988
12000$ 0.0971
27000$ 0.096
51000$ 0.0955
102000$ 0.095
150000$ 0.0946

Availability 17460
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1022
6000$ 0.1004
9000$ 0.0988
12000$ 0.0971
27000$ 0.096
51000$ 0.0955
102000$ 0.095
150000$ 0.0946


Availability 2910
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1184
6000$ 0.1119
9000$ 0.097


Availability 11261
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.434
5$ 0.364
10$ 0.3234
50$ 0.2422
100$ 0.2128


Availability 5815
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1974
10$ 0.162
30$ 0.144
100$ 0.1292
500$ 0.0835
1000$ 0.0813

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
Transistor Type
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Capacitance Ciss Max
Current Idss Max
Current Idss Min
Drain Source Voltage Vds
Operating Temperature Min
Operating Temperature Range
Power Dissipation Pd
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vgs Off Min
Zero Gate Voltage Drain Current Idss
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBFJ177LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ177LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ177LT1G is a dual N-channel enhancement mode field effect transistor manufactured by ON Semiconductor. It is designed for low to medium current, low voltage, and low power applications. The transistor has a nomimal drain-source voltage of 20V and Pd power dissipation of 250mW. It also has a low gate-source voltage and can handle a maximum current of 350mA. This part is also RoHS-compliant and meets the requirements for applications that require high resistance to ESD damage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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