MMBT2222LT1G ON Semiconductor

MMBT2222LT1G electronic component of ON Semiconductor
MMBT2222LT1G ON Semiconductor
MMBT2222LT1G Bipolar Transistors - BJT
MMBT2222LT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT2222LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2222LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT2222LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS SOT23 GP XSTR NPN 30V
Datasheet: MMBT2222LT1G Datasheet (PDF)
Price (USD)
12000: USD 0.0268 ea
Line Total: USD 321.6 
Availability : 168780
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
12000$ 0.0268
12000$ 0.0222
15000$ 0.0199
24000$ 0.0159

Availability 8031
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.068
200$ 0.0508
600$ 0.0311
3000$ 0.0212
9000$ 0.0178
21000$ 0.0159


Availability 2633
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.168
10$ 0.1064
100$ 0.0644
500$ 0.0462
745$ 0.0252


Availability 168780
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0268
12000$ 0.0222
15000$ 0.0199
24000$ 0.0159


Availability 43650
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.035
12000$ 0.0287
12000$ 0.0258
27000$ 0.0231


Availability 23280
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 24000
Multiples : 1
QtyUnit Price
24000$ 0.0195
100000$ 0.0164

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MMBT2222LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2222LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT2222LT1G is a NPN Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. It is a small signal surface-mount device and has a fairly broad-band transition from saturation to cut-off. It is designed for a wide range of applications such as general-purpose switching and amplifier applications. This device comes in a SOT-23 package making it suitable for a range of auto-insertion equipment. Within the package each transistor is individually marked with a unique manufacturing part number to ensure traceability. The MMBT2222LT1G has an operating junction temperature of up to +150 C, with continuous collector current of 500mA and a collector-emitter voltage of 30V. It has a switching time of 45+/-10ns and a DC current gain of 100 to 500 at Ic=100µA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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