MMBT4403WT1G Switching Transistor PNP Silicon Features Moisture Sensitivity Level: 1 MMBT4403WT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 40 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 5.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 30 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 60 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 150 mAdc, V = 2.0 Vdc) (Note 1) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) (Note 1) 20 C CE Collector Emitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 0.75 C B Base Emitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.75 0.95 C B (I = 500 mAdc, I = 50 mAdc) 1.3 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 200 MHz C CE T CollectorBase Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF BE C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.5 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re Small Signal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 60 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 100 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 d (V = 30 Vdc, V = 2.0 Vdc, CC EB ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 20 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 30 f 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT - 30 V - 30 V 200 200 < 20 ns < 2 ns +2 V +14 V 0 0 1.0 k 1.0 k C * < 10 pF S C * < 10 pF S -16 V - 16 V 1.0 to 100 s, 10 to 100 s, DUTY CYCLE = 2% DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time