MMBT5551LT3G ON Semiconductor

MMBT5551LT3G electronic component of ON Semiconductor
MMBT5551LT3G ON Semiconductor
MMBT5551LT3G Bipolar Transistors - BJT
MMBT5551LT3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT5551LT3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551LT3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT5551LT3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R
Datasheet: MMBT5551LT3G Datasheet (PDF)
Price (USD)
20000: USD 0.0164 ea
Line Total: USD 328 
Availability : 67900
  
Ship by Mon. 01 Sep to Fri. 05 Sep
QtyUnit Price
20000$ 0.0164

Availability 19400
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0249
30000$ 0.0245
50000$ 0.0244
100000$ 0.0243
150000$ 0.0241
250000$ 0.024
500000$ 0.0239
1000000$ 0.0238


Availability 27117
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 1528
Multiples : 1
QtyUnit Price
1528$ 0.1702
2313$ 0.1125
2348$ 0.1108
3825$ 0.068
3832$ 0.0679
5406$ 0.0481
8065$ 0.0323
9434$ 0.0275
10870$ 0.0239
15000$ 0.0191


Availability 67900
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 20000
Multiples : 10000
QtyUnit Price
20000$ 0.0164


Availability 8642
Ship by Mon. 08 Sep to Thu. 11 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0716
100$ 0.056
300$ 0.0482
1000$ 0.0286
5000$ 0.0255
10000$ 0.0239


Availability 27117
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 3832
Multiples : 1
QtyUnit Price
3832$ 0.0679
5406$ 0.0481
8065$ 0.0323
9434$ 0.0275
10870$ 0.0239
15000$ 0.0191


Availability 67900
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 20000
Multiples : 10000
QtyUnit Price
20000$ 0.0183


Availability 19400
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.0363
30000$ 0.0343
50000$ 0.0341
100000$ 0.034
150000$ 0.0338


Availability 4692
Ship by Mon. 01 Sep to Fri. 05 Sep
MOQ : 3803
Multiples : 1
QtyUnit Price
3803$ 0.0684
5278$ 0.0493

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5551LT3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551LT3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT5551LT3G is an NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device has a voltage rating of 160V, a current rating of 0.06A, and is housed in a 3-pin SOT-23 package. It also has a transition frequency of 1MHz and a typical power dissipation of 500mW. This part is designed for general purpose switching and amplifying applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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