MMDL914T3G

MMDL914 High-Speed Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOD323 MAXIMUM RATINGS CASE 477 Rating Symbol Value Unit STYLE 1 Reverse Voltage V 100 V R Forward Current I 200 mA F 1 2 CATHODE ANODE NonRepetitive Peak Forward Surge I 1.8 A FSM(surge) Current 60 Hz Repetitive Peak Forward Current I 1.0 A FRM MARKING DIAGRAM (Note 2) NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to J 5D M surge) t = 1 s 36.0 t = 10 s 18.0 t = 100 s 6.0 t = 1 ms 3.0 5D = Specific Device Code t = 10 ms 1.8 M = Date Code t = 100 ms 1.3 = PbFree Package t = 1 s 1.0 (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Total Device Dissipation FR-5 Board P 200 mW D Device Package Shipping T = 25C (Note 1) A MMDL914T1G SOD323 3,000 / Derate above 25C 1.57 mW/C (PbFree) Tape & Reel Thermal Resistance, R C/W JA SMMDL914T1G SOD323 3,000 / JunctiontoAmbient 635 (PbFree) Tape & Reel Junction and Storage Temperature T , T 55 to 150 C J stg MMDL914T3G SOD323 10,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. FR-4 Minimum Pad. refer to our Tape and Reel Packaging Specifications 2. Square Wave, f = 40 kHz, PW = 200 ns Brochure, BRD8011/D. Test Duration = 60 s, T = 25C prior to surge. J Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2019 Rev. 10 MMDL914T1/DMMDL914 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) 100 R Reverse Voltage Leakage Current I R (V = 20 Vdc) 25 nAdc R (V = 75 Vdc) 5.0 Adc R Diode Capacitance C pF T (V = 0 V, f = 1.0 MHz) 4.0 R Forward Voltage V Vdc F (I = 10 mAdc) 1.0 F Reverse Recovery Time t ns rr (I = I = 10 mAdc) (Figure 1) 4.0 F R 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2