MUR1610CTG, MUR1615CTG, MUR1620CTG, MUR1640CTG, MUR1660CTG Switch Mode Power Rectifiers www.onsemi.com These stateoftheart devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. ULTRAFAST RECTIFIERS Features 16 AMPERES, 100600 VOLTS Ultrafast 35 and 60 Nanosecond Recovery Times 175C Operating Junction Temperature Popular TO220 Package 1 Epoxy Meets UL 94 V0 0.125 in 2, 4 3 High Temperature Glass Passivated Junction High Voltage Capability to 600 V Low Leakage Specified 150C Case Temperature Current Derating Both Case and Ambient Temperatures 4 These are PbFree Devices* Mechanical Characteristics: Case: Epoxy, Molded TO220AB Weight: 1.9 Grams (Approximately) CASE 221A09 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 2 3 Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds MARKING DIAGRAM AY WW U16xxG AKA A = Assembly Location Y = Year WW = Work Week U16xx = Device Code xx = 10, 15, 20, 40 or 60 G = PbFree Package KA = Diode Polarity *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques ORDERING INFORMATION Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 MUR1620CT/DMUR1610CTG, MUR1615CTG, MUR1620CTG, MUR1640CTG, MUR1660CTG MAXIMUM RATINGS MUR16 10CT 15CT 20CT 40CT 60CT Rating Symbol Unit Peak Repetitive Reverse Voltage V 100 150 200 400 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current Per Leg I 8.0 A F(AV) Total Device, (Rated V ), T = 150C Total Device 16 R C Peak Rectified Forward Current Per Diode Leg I 16 A FM (Rated V , Square Wave, 20 kHz), T = 150C R C Nonrepetitive Peak Surge Current I 100 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Diode Leg) Parameter Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase R 3.0 2.0 C/W JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol 1620 1640 1660 Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 8.0 A, T = 150C) 0.895 1.00 1.20 F C (i = 8.0 A, T = 25C) 0.975 1.30 1.50 F C Maximum Instantaneous Reverse Current (Note 1) i A R (Rated DC Voltage, T = 150C) 250 500 C (Rated DC Voltage, T = 25C) 5.0 10 C Maximum Reverse Recovery Time t ns rr (I = 1.0 A, di/dt = 50 A/ s) 35 60 F (I = 0.5 A, I = 1.0 A, I = 0.25 A) 25 50 F R REC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% www.onsemi.com 2