Dual MOSFET Gate Driver, High Performance NCP81075 Introduction The NCP81075 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power www.onsemi.com MOSFETs in a synchronous buck converter. The NCP81075 uses an onchip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The lowside and highside are independently controlled 8 and match to 4 ns between the turnon and turnoff of each other. 1 1 1 Independent UnderVoltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below SOIC8 NB DFN8 WDFN10 CASE 75107 CASE 506CY CASE 511CE a specific threshold. Features MARKING DIAGRAMS Drives Two N-Channel MOSFETs in High-Side and Low-Side 8 Configuration NCP NCP81075 Floating Top Driver Accommodates Boost Voltage up to 180 V 81075 ALYW ALYW Switching Frequency up to 1 MHz 20 ns Propagation Delay Times 1 4 A Sink, 4 A Source Output Currents NCP81075 = Specific Device Code 8 ns Rise / 7 ns Fall Times with 1000 pF Load A = Assembly Location UVLO Protection L = Wafer Lot Y = Year Specified from 40C to 140C W = Work Week Offered in SOIC8 (D), DFN8 (MN), WDFN10 (MT) = PbFree Package Packages (Note: Microdot may be in either location) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PINOUT DIAGRAMS Applications VDD 1 10 LO VDD 1 8 LO Telecom and Datacom HB29 VSS HB27 VSS Isolated NonIsolated Power Supply Architectures HO38 LI HO36 LI Class D Audio Amplifiers HS47 HI HS45 HI Two Switch and Active Clamp Forward Converters NC56 NC SOIC/DFN8 WDFN10 Simplified Application Diagram NCP81075 (top views) VDD VDD HB ORDERING INFORMATION VIN HI HO Device Package Shipping PWM NCP81075 VOUT CONTROLLER HS NCP81075DR2G SOIC8 2500 / LI (PbFree) Tape & Reel LO NCP81075MNTXG DFN8 4000 / VSS (PbFree) Tape & Reel NCP81075MTTXG WDFN10 4000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2021 Rev. 3 NCP81075/DNCP81075 Table 1. PIN DESCRIPTION Pin No. Pin No. Symbol Description SOIC/DFN8 WDFN10 1 1 VDD Positive Supply to the Lower Gate Driver 2 2 HB High Side Bootstrap Supply 3 3 HO High Side Output 4 4 HS HighSide Source 5 7 HI HighSide Input 6 8 LI LowSide Input 7 9 VSS Negative Supply Return 8 10 LO LowSide Output 5,6 NC No Connect Table 2. MAXIMUM RATINGS Parameter Value Units VDD 0.3 to 24 V V 0.3 to 200 V HB V DC V 0.3 to V + 0.3 V HO HS HB Repetitive Pulse < 100 ns V 2 to V + 0.3, (V V < 24) HS HB HB HS V DC 20 to 200 VDD V HS V DC 0.3 to VDD + 0.3 V LO Repetitive pulse < 100 ns 2 to VDD + 0.3 V , V 10 to 24 V HI LI V 0.3 to 24 V HB HS Operating Junction Temperature Range, T 40 to 170 C J Storage Temperature, T 65 to 150 C STG Lead Temperature (Soldering, 10 sec) +300 C HBM 1000 V CDM 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V V should be in the range of 0.3 V to +20 V. HB HS Table 3. RECOMMENDED OPERATING CONDITIONS Parameter Min Nom Max Units V Supply Voltage Range 8.5 12 20 V DD V Voltage on HS (DC) 10 180 VDD HS V Voltage on HB V + 8, V + 20, HB HS HS V 1 180 DD Voltage Slew Rate on HS 50 V / ns T Operating Junction Temperature Range 40 +140 C J V V 0.3 V + 0.3 V HO HS HB V 0.3 V + 0.3 V LO DD Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2