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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. R = 0.025 V =10V. These N-Channel enhancement mode power field effect DS(ON) GS transistors are produced using Fairchild s proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. process has been especially tailored to minimize on-state resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor. commutation modes. These devices are particularly suited 175C maximum junction temperature rating. for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery High density cell design for extremely low R . DS(ON) powered circuits where fast switching, low in-line power 2 loss, and resistance to transients are needed. TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. D G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP6060 NDB6060 Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 M) DGR GS V Gate-Source Voltage - Continuous 20 V GSS - Nonrepetitive (t < 50 s) 40 P o I Drain Current - Continuous T =25 C 48 A D c o - Continuous T =100 C 32 C - Pulsed 144 P Total Power Dissipation T = 25C 100 W D C Derate above 25C 0.67 W/C T ,T Operating and Storage Temperature Range -65 to 175 C J STG T Maximum lead temperature for soldering purposes, 275 C L 1/8 from case for 5 seconds 1997 Fairchild Semiconductor Corporation NDP6060 Rev. B1 / NDB6060 Rev. C