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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 75A, 60V. R = 0.013 V =10V. DS(ON) GS transistors are produced using Fairchild s proprietary, high cell Critical DC electrical parameters specified at elevated density, DMOS technology. This very high density process is temperature. especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such 175C maximum junction temperature rating. as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line High density cell design for extremely low R . DS(ON) power loss, and resistance to transients are needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. D G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter NDP7060 NDB7060 Units V Drain-Source Voltage 60 V DSS V 60 V DGR Drain-Gate Voltage (R < 1 M) GS V Gate-Source Voltage - Continuous 20 V GSS - Nonrepetitive (t < 50 s) 40 P I Drain Current - Continuous 75 A D - Pulsed 225 P Maximum Power Dissipation T = 25C 150 W D C Derate above 25C 1 W/C T ,T Operating and Storage Temperature Range -65 to 175 C J STG T Maximum lead temperature for soldering purposes, 275 C L 1/8 from case for 5 seconds 1997 Fairchild Semiconductor Corporation NDP7060.SAM