NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low NGTB30N60SWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.66 C/W JC Thermal resistance junctiontocase, for Diode R 2.73 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 1.9 2.2 V GE C CEsat V = 15 V, I = 30 A, T = 150C 2.6 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 2040 pF ies Output capacitance C 70 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 50 res Gate charge total Q 90 nC g Gate to emitter charge Q 19 V = 480 V, I = 30 A, V = 15 V ge CE C GE Gate to collector charge Q 45 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 57 ns d(on) Rise time t 32 r T = 25C J Turnoff delay time t 109 d(off) V = 400 V, I = 30 A CC C R = 10 g Fall time t 91 f V = 0 V/ 15 V GE Turnon switching loss E 0.75 mJ on Turnoff switching loss E 0.54 mJ off Turnon delay time t 56 ns d(on) Rise time t 34 r T = 150C J Turnoff delay time t 113 d(off) V = 400 V, I = 30 A CC C R = 10 g Fall time t 172 f V = 0 V/ 15 V GE Turnon switching loss E 0.91 mJ on Turnoff switching loss E 0.87 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 30 A V 2.3 2.5 V GE F F V = 0 V, I = 30 A, T = 150C 2.5 GE F J Reverse recovery time T = 25C t 200 ns J rr I = 30 A, V = 400 V F R Reverse recovery charge Q 1000 nc rr di /dt = 200 A/ s F Reverse recovery current I 9 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.