NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated NGTB40N120IHLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.48 C/W JC Thermal resistance junctiontocase, for Diode R 1.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.90 2.35 V GE C CEsat V = 15 V, I = 40 A, T = 150C 2.1 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 10400 pF ies Output capacitance C 245 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 185 res Gate charge total Q 420 nC g Gate to emitter charge Q 95 V = 600 V, I = 40 A, V = 15 V ge CE C GE Gate to collector charge Q 178 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 360 ns d(off) T = 25C J V = 600 V, I = 40 A CC C Fall time t 130 f R = 10 g V = 0 V/ 15V Turnoff switching loss GE E 1.40 mJ off Turnoff delay time t 380 ns d(off) T = 125C J V = 600 V, I = 40 A CC C Fall time t 185 f R = 10 g V = 0 V/ 15V Turnoff switching loss GE E 2.6 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 1.6 1.8 V GE F F V = 0 V, I = 40 A, T = 150C 1.8 GE F J