NGTB40N60L2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology T = 175C Jmax 40 A, 600 V Soft Fast Reverse Recovery Diode V = 1.65 V CEsat Optimized for Low V CEsat E = 0.28 mJ 5 s ShortCircuit Capability OFF This is a PbFree Device C Typical Applications Motor Drive Inverters Industrial Switching G Welding ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 80 TC = 100C 40 TO247 Diode Forward Current I A G F CASE 340AL C TC = 25C 80 E TC = 100C 40 Diode Pulsed Current I 160 A FM T Limited by T Max PULSE J MARKING DIAGRAM Pulsed collector current, T I 160 A pulse CM limited by T Jmax Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE T +150C J 40N60L2 Gateemitter voltage V 20 V GE AYWWG V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 417 TC = 100C 208 Operating junction temperature T 55 to +175 C A = Assembly Location J range Y = Year WW = Work Week Storage temperature range T 55 to +175 C stg G = PbFree Package Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. NGTB40N60L2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 2 NGTB40N60L2W/DNGTB40N60L2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.36 C/W JC Thermal resistance junctiontocase, for Diode R 1.00 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.65 1.90 V GE C CEsat V = 15 V, I = 40 A, T = 175C 1.90 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.8 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 5.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5286 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 213 oes CE GE Reverse transfer capacitance C 147 res Gate charge total Q 228 nC g Gate to emitter charge Q 50 V = 480 V, I = 40 A, V = 15 V CE C GE ge Gate to collector charge Q 115 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 98 ns d(on) Rise time t 42 r Turnoff delay time t 213 T = 25C J d(off) V = 400 V, I = 40 A CC C Fall time t 60 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.17 mJ GE on Turnoff switching loss E 0.28 off Total switching loss E 1.45 ts Turnon delay time t 98 ns d(on) Rise time t 44 r Turnoff delay time t 220 T = 150C J d(off) V = 400 V, I = 40 A CC C Fall time t 88 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.45 mJ GE on Turnoff switching loss E 0.68 off Total switching loss E 2.13 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 2.40 3.00 V GE F F V = 0 V, I = 40 A, T = 175C 2.58 GE F J Reverse recovery time t 73 ns rr T = 25C J Reverse recovery charge Q 282 nC I = 40 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 6.7 A rrm Reverse recovery time t 160 ns rr T = 175C J Reverse recovery charge Q 912 nC I = 40 A, V = 200 V rr F R di /dt = 200 A/ s F Reverse recovery current I 8.6 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2