NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Features NGTG40N120FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 2.00 2.40 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.40 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 400 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 7385 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 230 CE GE oes Reverse transfer capacitance C 140 res nC Gate charge total Q 313 g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 61 CE C GE ge Gate to collector charge Q 151 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 116 ns d(on) Rise time t 42 r Turnoff delay time t 286 T = 25C d(off) J V = 600 V, I = 40 A CC C Fall time t 121 f R = 10 g V = 0 V/ 15V* mJ Turnon switching loss E 3.4 GE on Turnoff switching loss E 1.1 off Total switching loss E 4.5 ts ns Turnon delay time t 111 d(on) Rise time t 43 r Turnoff delay time t 304 T = 175C d(off) J V = 600 V, I = 40 A CC C Fall time t 260 f R = 10 g V = 0 V/ 15V* mJ Turnon switching loss E 4.4 GE on Turnoff switching loss E 2.5 off Total switching loss E 6.9 ts Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTB40N120FL2WG.