ESD Protection with Automotive Short-to- Battery Blocking Low Capacitance ESD Protection with shorttobattery blocking for Automotive High Speed Data Lines www.onsemi.com NIx1161 Series MARKING The NIx1161 series is designed to protect high speed data lines DIAGRAM from ESD as well as short to vehicle battery situations. The ultralow WDFN6 capacitance and low ESD clamping voltage make this device an ideal V6 M CASE 511CB solution for protecting voltage sensitive high speed data lines while 1 the low R FET limits distortion on the signal lines. The DS(on) V6 = Specific Device Code flowthrough style package allows for easy PCB layout and matched M = Date Code trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB and LVDS protocols. WDFNW6 16 M CASE 515AK 1 Features 16 = Specific Device Code Low Capacitance (0.65 pF Typical, I/O to GND) M = Date Code Protection for the Following Standards: IEC 6100042 (Level 4) & ISO 10605 PIN CONFIGURATION Integrated MOSFETs: AND SCHEMATICS ShorttoBattery Blocking ShorttoUSB V Blocking BUS 1 6 6 NIV1161MTWTAG Wettable Flanks Device for optimal 2 5 Automated Optical Inspection (AOI) 4 NIV Prefix for Automotive and Other Applications Requiring 3 4 Unique Site and Control Change Requirements AECQ101 (Top View) Qualified and PPAP Capable Pin 2 5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Pin 1 Pin 6 Typical Applications D+ HOST D+ Automotive High Speed Signal Pairs USB 2.0 Pin 3 Pin 4 D HOST D LVDS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Pin 5 GND Pin 2 5 V Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +150 C J(max) Storage Temperature Range T 55 to +150 C STG ORDERING INFORMATION DraintoSource Voltage V 30 V DSS Device Package Shipping GatetoSource Voltage V 10 V GS NIV1161MTTAG, WDFN6 3000 / Tape & Reel NIS1161MTTAG (PbFree) Lead Temperature Soldering T 260 C SLD NIV1161MTWTAG WDFNW6 3000 / Tape & Reel IEC 6100042 Contact (ESD) ESD 8 kV (PbFree) IEC 6100042 Air (ESD) ESD 15 kV For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 6 NIV1161/DNIx1161 Series ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 16 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 16.5 23 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage V I = 1 A, I/O Pin to GND (8/20 s pulse) 26 V C PP Clamping Voltage (Note 1) V IEC6100042, 8 KV Contact See Figures 1 & 2 C Clamping Voltage TLP (Note 2) V I = 8 A 34 V C PP See Figures 5 & 6 I = 16 A 55 V PP I = 8 A 5.2 V PP I = 16 A 10 V PP Junction Capacitance Match C V = 0 V, f = 1 MHz between I/O 1 to GND 1.0 % J R and I/O 2 to GND Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and 0.65 pF J R GND (Pin 4 to GND, Pin 6 to GND) DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 30 V BR(DSS) GS D DraintoSource Breakdown Voltage V / Reference to 25 C, I = 100 A 27 mV/ C BR(DSS) D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 A DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 5 V 1.0 A GSS DS GS Gate Threshold Voltage (Note 3) V V = V , I = 100 A 0.1 1.0 1.5 V GS(TH) DS GS D Gate Threshold Voltage Temperature V /T Reference to 25 C, I = 100 A 2.5 mV/ C GS(TH) J D Coefficient DraintoSource On Resistance R V = 4.5 V, I = 125 mA 1.4 7.0 DS(on) GS D V = 2.5 V, I = 125 mA 2.3 7.5 GS D Forward Transconductance g V = 3.0 V, I = 125 mA 80 mS FS DS D Switching TurnOn Delay Time (Note 4) t V = 4.5 V, V = 24 V 9 nS d(ON) GS DS I = 125 mA, R = 10 V D G Switching TurnOn Rise Time (Note 4) t 41 nS r Switching TurnOff Delay Time (Note 4) t 96 nS d(OFF) Switching TurnOff Fall Time (Note 4) t 72 nS f DraintoSource Forward Diode Voltage V V = 0 V, I = 125 mA 0.79 0.9 V SD GS s 3 dB Bandwidth f R = 50 5 GHz BW L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 3 and 4 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 , tp = 100 ns, tr = 1 ns, averaging window t1 = 70 ns to t2 = 90 ns. 3. Pulse test: pulse width 300 S, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2