NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for highgain audio amplifier applications. www.onsemi.com Features High DC Current Gain SILICON Low CollectorEmitter Saturation Voltage POWER TRANSISTORS High CurrentGain Bandwidth Product 2 AMPERES Epoxy Meets UL 94 V0 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Applications Requiring 15 WATTS Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2,4 Compliant 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 3 CollectorBase Voltage V 50 Vdc CB EMITTER CollectorEmitter Voltage V 50 Vdc CEO EmitterBase Voltage V 5 Vdc EB 4 Collector Current Continuous I 2 Adc C 1 2 Collector Current Peak I 3 Adc CM 3 Base Current I 0.4 Adc B DPAK CASE 369C Total Device Dissipation P D STYLE 1 T = 25C 15 W C Derate above 25C 0.1 W/C MARKING DIAGRAM Total Device Dissipation P D T = 25C* 1.68 W A Derate above 25C 0.011 W/C AYWW J Operating and Storage Junction T , T 65 to +175 C J stg Temperature Range 2873G ESD Human Body Model HBM 3B V A = Assembly Location ESD Machine Model MM C V Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be G = PbFree Device assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NJD2873T4G DPAK 2,500 (PbFree) Units / Reel NJVNJD2873T4G DPAK 2,500 (PbFree) Units / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2017 Rev. 18 NJD2873T4/DNJD2873 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance C/W JunctiontoCase R 10 JC JunctiontoAmbient (Note 1) R 89.3 JA 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 50 C B Collector Cutoff Current I nAdc CBO (V = 50 Vdc, I = 0) 100 CB E Emitter Cutoff Current (V = 5 Vdc, I = 0) I 100 nAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 0.5 A, V = 2 V) C CE 120 360 (I = 2 Adc, V = 2 Vdc) C CE 40 (I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C) C CE J 80 360 CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 1 A, I = 0.05 A) C B 0.3 BaseEmitter Saturation Voltage (Note 2) (I = 1 A, I = 0.05 Adc) V 1.2 Vdc C B BE(sat) BaseEmitter On Voltage (Note 2) V Vdc BE(on) (I = 1 Adc, V = 2 Vdc) 1.2 C CE (I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C) 0.95 C CE J DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 3) f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 65 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 80 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 3. f = h f . T fe test www.onsemi.com 2