Product Information

NRVB120LSFT1G

NRVB120LSFT1G electronic component of ON Semiconductor

Datasheet
Diode Schottky 20V 1A Automotive 2-Pin SOD-123FL T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

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NRVB120LSFT1G
ON Semiconductor

3000 : USD 0.1465
N/A

Obsolete
0 - WHS 2


Multiples : 6000

Stock Image

NRVB120LSFT1G
ON Semiconductor

N/A

Obsolete
0 - WHS 3

MOQ : 2819
Multiples : 2819

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NRVB120LSFT1G
ON Semiconductor

2819 : USD 0.1318
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

NRVB120LSFT1G
ON Semiconductor

1 : USD 1.248
10 : USD 0.5654
100 : USD 0.2808
500 : USD 0.2139
1000 : USD 0.1671
3000 : USD 0.1449
9000 : USD 0.1371
24000 : USD 0.1326
N/A

Obsolete
0 - WHS 5

MOQ : 3000
Multiples : 3000

Stock Image

NRVB120LSFT1G
ON Semiconductor

3000 : USD 0.1295
N/A

Obsolete
     
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MBR120LSF, NRVB120LSF Surface Mount Schottky Power Rectifier Plastic SOD123 Package This device uses the Schottky Barrier principle with a large area MBR120LSF, NRVB120LSF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 115C) 1.0 R L Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 110C) 2.0 R L NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change (Rated V , T = 25C) dv/dt 10,000 V/ s R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 26 C/W tjl Thermal Resistance JunctiontoLead (Note 2) R 21 tjl Thermal Resistance JunctiontoAmbient (Note 1) R 325 tja Thermal Resistance JunctiontoAmbient (Note 2) R 82 tja 1. Mounted with minimum recommended pad size, PC Board FR4. 2 2. Mounted with 1 in. copper pad (Cu area 700 mm ). ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 V T = 25C T = 85C V F J J (I = 0.1 A) 0.34 0.26 F (I = 1.0 A) 0.45 0.415 F (I = 3.0 A) 0.65 0.67 F Maximum Instantaneous Reverse Current (Note 3), See Figure 4 I T = 25C T = 85C mA R J J (V = 20 V) 0.40 25 R (V = 10 V) 0.10 18 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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