Product Information

NRVBB2535CTLG

NRVBB2535CTLG electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers REC D2PAK 25A 35V SHTKY

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

NRVBB2535CTLG
ON Semiconductor

1 : USD 3.483
10 : USD 2.9
100 : USD 2.425
600 : USD 2.04
1200 : USD 1.776
2700 : USD 1.68
5100 : USD 1.68
10200 : USD 1.68
25200 : USD 1.668
N/A

Obsolete
0 - WHS 2

MOQ : 300
Multiples : 50

Stock Image

NRVBB2535CTLG
ON Semiconductor

300 : USD 2.234
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Height
Length
Operating Temperature Range
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier 2 D PAK Surface Mount Power Package MBRB2535CTLG, NRVBB2535CTLG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 35 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current, (Rated V , T = 110C) I 12.5 A R C F(AV) Peak Repetitive Forward Current, (Rated V , Square Wave, 20 kHz, T = 90C) I 25 A R C FRM NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +150 C stg Operating Junction Temperature T 65 to +125 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance C/W Junction toCase R 1.0 JC JunctiontoAmbient (Note 1) R 84 JA 1. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 25 A, T = 25C) 0.55 F J (i = 12.5 A, T = 125C) 0.41 F J (i = 12.5 A, T = 25C) 0.47 F J Maximum Instantaneous Reverse Current (Note 2) I mA R (Rated dc Voltage, T = 125C) 500 J (Rated dc Voltage, T = 25C) 10 J 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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