Product Information

NRVBM130LT3G

NRVBM130LT3G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers LOW VF SCHOTTKY RECTIFIER

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 12000
Multiples : 12000

Stock Image

NRVBM130LT3G
ON Semiconductor

12000 : USD 0.1429
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

NRVBM130LT3G
ON Semiconductor

1 : USD 0.7171
10 : USD 0.5891
100 : USD 0.3165
500 : USD 0.2409
1000 : USD 0.1879
2500 : USD 0.1639
12000 : USD 0.1503
24000 : USD 0.1443
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
If - Forward Current
Vf - Forward Voltage
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Type
Brand
Max Surge Current
Recovery Time
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G Surface Mount Schottky Power Rectifier MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 135C) 1.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 135C) 2.0 R C NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance, JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance, JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10 ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 V T = 25C T = 85C V F J J (I = 0.1 A) 0.30 0.20 F (I = 1.0 A) 0.38 0.33 F (I = 3.0 A) 0.52 0.50 F I mA Maximum Instantaneous Reverse Current (Note 2), See Figure 4 T = 25C T = 85C R J J (V = 30 V) 0.41 11 R (V = 20 V) 0.13 5.3 R (V = 10 V) 0.05 3.2 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2% 10 10 T = 150C J T = 150C J T = 125C J 1.0 1.0 T = 125C J T = 85C J T = 85C J T = 25C T = 25C J J T = 40C T = 40C J J 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE F F (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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