Product Information

NRVHP820MFDWFT1G

NRVHP820MFDWFT1G electronic component of ON Semiconductor

Datasheet
Rectifiers 200V/4A PUF DFN-8

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3878 ea
Line Total: USD 0.39

1455 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

NRVHP820MFDWFT1G
ON Semiconductor

1 : USD 0.3878

1215 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

NRVHP820MFDWFT1G
ON Semiconductor

1 : USD 1.587
10 : USD 1.311
100 : USD 1.0419
500 : USD 0.7705
1500 : USD 0.7038
9000 : USD 0.6866
24000 : USD 0.6762

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
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NRVHP820MFD Switch-Mode Power Rectifier This ultrafast rectifier in the dual flag SO8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as www.onsemi.com common cathode, as common anode or in series as a function of board level layout. The exposed pad design provides low thermal resistance. The clip attach design creates a package with very efficient die size to ULTRAFAST RECTIFIER board area ratio. While thermal performance is nearly the same as the 8 AMPERES (4x2), 200 VOLTS DPAK package height and board footprint are less than half. Features 1 7,8 New Package Provides Capability of Inspection and Probe After 3 5,6 Board Mounting Low Forward Voltage Drop 175C Operating Junction Temperature MARKING DIAGRAM NRV Prefix for Automotive and Other Applications Requiring C1 C1 Unique Site and Control Change Requirements AECQ101 1 A1 C1 Qualified and PPAP Capable DFN8 5x6 NC C1 HP820D (SO8FL) These are PbFree and HalideFree Devices A2 C2 AYWZZ CASE 506BT NC C2 Mechanical Characteristics: C2 C2 Case: Epoxy, Molded HP820D = Specific Device Code Epoxy Meets Flammability Rating UL 940 0.125 in. A = Assembly Location Y = Year Lead Finish: 100% Matte Sn (Tin) W = Work Week Lead and Mounting Surface Temperature for Soldering Purposes: ZZ = Lot Traceability 260C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Applications Device Package Shipping Excellent Alternative to DPAK in SpaceConstrained Automotive NRVHP820MFDT1G DFN8 1500 / Tape Applications (PbFree) & Reel Output Rectification in Switching Power Supplies NRVHP820MFDT3G DFN8 5000 / Tape Freewheeling Diode used with Inductive Loads (PbFree) & Reel NRVHP820MFDWFT1G DFN8 1500 / Tape (PbFree) & Reel NRVHP820MFDWFT3G DFN8 5000 / Tape (PbFree) & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2018 Rev. 3 NHP820MFD/DNRVHP820MFD MAXIMUM RATINGS (per diode unless noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 200 R Average Rectified Forward Current I 4.0 A F(AV) (Rated V , T = 170C) R C Peak Repetitive Forward Current, I 8.0 A FRM (Rated V , Square Wave, 20 kHz, T = 169C) R C NonRepetitive Peak Surge Current I 80 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 20 mJ AS ESD Rating (Human Body Model) 2 ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (per diode unless noted) Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.9 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS (per diode unless noted) Instantaneous Forward Voltage (Note 1) v V F (i = 4.0 Amps, T = 125C) 0.71 0.80 F J (i = 4.0 Amps, T = 25C) 0.85 0.95 F J (i = 8.0 Amps, T = 125C) 0.72 0.90 F J (i = 8.0 Amps, T = 25C) 0.92 1.05 F J Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 125C) 2.00 35 J (Rated dc Voltage, T = 25C) 0.02 0.5 J Reverse Recovery Time t 24 30 ns rr I = 3.0 A, V = 30 V, dl/dt = 50 A/ s, T = 25C F R J Reverse Recovery Time t 27 50 ns rr I = 3.0 A, V = 30 V, dl/dt = 50 A/ s, T = 125C F R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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