Product Information

NRVHPM220T3G

NRVHPM220T3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Rectifiers PUF 2A 200V IN POWERMITE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7897 ea
Line Total: USD 1.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 12000
Multiples : 12000

Stock Image

NRVHPM220T3G
ON Semiconductor

12000 : USD 0.2861
24000 : USD 0.2833
36000 : USD 0.2804
48000 : USD 0.2777
60000 : USD 0.2748
120000 : USD 0.2721
300000 : USD 0.2694
600000 : USD 0.2668
1500000 : USD 0.264

0 - WHS 2


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

NRVHPM220T3G
ON Semiconductor

1 : USD 1.7897
10 : USD 0.8507
100 : USD 0.4627
500 : USD 0.3633
1000 : USD 0.281
2500 : USD 0.2564
5000 : USD 0.2393
12000 : USD 0.233

0 - WHS 3


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

NRVHPM220T3G
ON Semiconductor

1 : USD 1.0808
5 : USD 0.504
25 : USD 0.455
48 : USD 0.3402
131 : USD 0.3206

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Operating Temperature Range
Product
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NHPM220, NRVHPM220 Surface Mount Ultra Fast Power Rectifier POWERMITE Power Surface Mount Package www.onsemi.com This ultrafast POWERMITE provides soft recovery fast switching performance in a compact thermally efficient package. The advanced ULTRAFAST packaging techniques provide for a very efficient microminiature spacesaving surface mount rectifier. With its unique heatsink design, RECTIFIER the POWERMITE offers thermal performance similar to the SMA 2.0 AMPERE, 200 VOLTS while being 50% smaller in footprint area. Features Fast Soft Switching for Reduced EMI and Higher Efficiency CATHODE Low Profile Maximum Height of 1.1 mm 2 Small Footprint Footprint Area of 8.45 mm ANODE Supplied in 12 mm Tape and Reel POWERMITE Low Thermal Resistance with Direct Thermal Path of Die on CASE 457 Exposed Cathode Heat Sink NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING DIAGRAM Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS M 12 P22 Compliant Mechanical Characteristics: M = Date Code POWERMITE is JEDEC Registered as D0216AA P22 = Device Code Case: Molded Epoxy = PbFree Package Epoxy Meets UL 94 V0 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260C Maximum for 10 Seconds Device Package Shipping MSL 1 NHPM220T3G POWERMITE 12000 / Tape & (PbFree) Reel Applications Automotive LED Lighting NRVHPM220T3G POWERMITE 12000 / Tape & (PbFree) Reel Engine Control Freewheeling Diode Where Space is at a Premium For information on tape and reel specifications, including part orientation and tape sizes, please Flat Panel Display refer to our Tape and Reel Packaging Specifications Infotainment and Other Space Constrained Centerstack Brochure, BRD8011/D. Applications Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 2 NHPM220/DNHPM220, NRVHPM220 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 2.0 A O (T = 155C) L Peak Repetitive Forward Current I 4.0 A FRM (Rated V , Square Wave, 20 kHz) T = 153C R L NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 12 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) R 75 C/W JA Thermal Resistance, JunctiontoAmbient (Note 3) R 260 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 1.0 (I = 1.0 A, T = 25C) F J 1.05 (I = 2.0 A, T = 25C) F J 0.86 (I = 1.0 A, T = 125C) F J 0.90 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I A R (Rated dc Voltage, T = 25C) 0.5 J (Rated dc Voltage, T = 125C) 35 J Reverse Recovery Time t 50 ns rr I = 2.0 A V = 30 V dl/dt = 50 A/ s F R T = 40C to 150C J 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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