NRVTS12100EMFST1G ON Semiconductor

NRVTS12100EMFST1G electronic component of ON Semiconductor
NRVTS12100EMFST1G ON Semiconductor
NRVTS12100EMFST1G Schottky Diodes & Rectifiers
NRVTS12100EMFST1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NRVTS12100EMFST1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NRVTS12100EMFST1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. NRVTS12100EMFST1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers LOW LEAKAGE 12A 100V TRE
Datasheet: NRVTS12100EMFST1G Datasheet (PDF)
Price (USD)
1500: USD 0.3438 ea
Line Total: USD 515.7 
Availability : 1455
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
1500$ 0.3438
3000$ 0.3171
6000$ 0.3036
12000$ 0.289
15000$ 0.278
30000$ 0.2642

Availability 1455
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.3453
3000$ 0.3178
6000$ 0.3047
12000$ 0.29
15000$ 0.2787
30000$ 0.2653


Availability 1455
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.3438
3000$ 0.3171
6000$ 0.3036
12000$ 0.289
15000$ 0.278
30000$ 0.2642

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NRVTS12100EMFST1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NRVTS12100EMFST1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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NTS12100EMFS, NRVTS12100EMFS Very Low Leakage Trench-based Schottky Rectifier NTS12100EMFS, NRVTS12100EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 12 A F(AV) (Rated V , T = 163C) R C Peak Repetitive Forward Current, I 24 A FRM (Rated V , Square Wave, 20 kHz, T = 160C) R C NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.0 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 5 A, T = 25C) 0.52 F J (i = 12 A, T = 25C) 0.65 0.73 F J (i = 5 A, T = 125C) 0.46 F J (i = 12 A, T = 125C) 0.57 0.64 F J Instantaneous Reverse Current (Note 1) i R (V = 70 V, T = 25C) 1.3 A R J (Rated dc Voltage, T = 25C) 5.0 55 A J (V = 70 V, T = 125C) 1.8 mA R J (Rated dc Voltage, T = 125C) 4.3 15 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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