Schottky Barrier Diode NSR0230P2 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features Extremely Fast Switching Speed 30 V SCHOTTKY Extremely Low Forward Voltage 0.325 V (max) I = 10 mA F BARRIER DIODE Low Reverse Current NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 2 Qualified and PPAP Capable CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING MAXIMUM RATINGS 2 DIAGRAM Rating Symbol Value Unit 1 Reverse Voltage V 30 Vdc R K M SOD923 Forward Current DC I 200 mA F 12 CASE 514AB Forward Current Surge Peak I 1.0 A FSM (60 Hz, 1 cycle) K = Specific Device Code* (Character is rotated 270 clockwise) ESD Rating: Class 3B per Human Body Model M = Month Code ESD Rating: Class C per Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERISTICS Device Package Shipping Characteristic Symbol Max Unit NSR0230P2T5G SOD923 2 mm Pitch (PbFree) 8000/Tape & Reel Total Device Dissipation FR5 Board, P 200 mW D (Note 1) T = 25C A NSVR0230P2T5G SOD923 2 mm Pitch Derate above 25C 2.0 mW/C (PbFree) 8000/Tape & Reel Thermal Resistance, JunctiontoAmbient R 600 C/W JA For information on tape and reel specifications, Junction and Storage T , T 55 to C J stg including part orientation and tape sizes, please Temperature Range +125 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR5 Minimum Pad. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I 10 A R (V = 10 V) R Forward Voltage V Vdc F (I = 10 mA) 0.325 F (I = 200 mA) 0.500 F Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2019 Rev. 3 NSR0230P2/DNSR0230P2 TYPICAL CHARACTERISTICS 1 10m T = 125C A 1m 100m T = 125C A 100 T = 75C A 10m T = 75C A 10 1m 1 T = 25C A 100 T = 25C 100n A T = 25C 10 A 10n T = 25C A 1 1n 0 0.1 0.2 0.3 0.4 0.5 0.6 0 510 15 20 25 30 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 20 18 16 14 12 10 8 6 4 2 0 0 510 15 20 25 30 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (A) F C , TOATAL CAPACITANCE (pF) T I , REVERSE CURRENT (A) R