NSPM0061 ESD Protection Diode Features Protection for the following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 70 A (8/20 s) www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Cathode Anode MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 30 kV MARKING Air 30 DIAGRAM Operating Junction and Storage T , T 65 to +150 C J stg Temperature Range UDFN2 F M Maximum Peak Pulse Current I 70 A PP CASE 517CZ 8/20 s T = 25C A Stresses exceeding those listed in the Maximum Ratings table may damage the F = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NSPM0061MUT5G UDFN2 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2017 Rev. 2 NSPM0061/DNSPM0061 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 6.3 V RWM Breakdown Voltage (Note 1) V I = 1 mA 6.5 7.3 9.0 V BR T Reverse Leakage Current I V = 6.3 V 1 A R RWM Clamping Voltage (Note 2) V 7.5 V I = 1 A, t = 8 x 20 s C PP p Clamping Voltage (Note 2) V I = 35 A, t = 8 x 20 s 9.5 V C PP p Clamping Voltage (Note 2) V I = 70 A, t = 8 x 20 s 11.5 V C PP p Junction Capacitance C V = 0 V, f = 1 MHz 12 pF J R Dynamic Resistance R TLP Pulse 0.04 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2