Product Information

NSPM8181MUTBG

NSPM8181MUTBG electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 18V UNIDIRECTIONAL

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0747 ea
Line Total: USD 1.07

1697 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1697 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

NSPM8181MUTBG
ON Semiconductor

1 : USD 0.6424
10 : USD 0.5434
100 : USD 0.3828
500 : USD 0.3079
1000 : USD 0.2524
3000 : USD 0.2185
9000 : USD 0.2173
24000 : USD 0.2138
45000 : USD 0.2126

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
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NSPM8151, NSPM8181 15 V and 18 V Unidirectional ESD and Surge Protection Device Features www.onsemi.com Unidirectional High Voltage ESD & Surge Protection Device Provides ESD Protection to IEC6100042 Level 4: 30 kV Contact Discharge IEC 6100045 (lighting) High Voltage Zener Diode Protects Supply Rail up to 100 A (8/20 s) UDFN6 These Devices are PbFree and are RoHS Compliant D4 SUFFIX CASE 517CS APPLICATION DIAGRAM Vcc (1) BLOCK DIAGRAM Cathode Anode GND (6) MARKING DIAGRAM DAP** Ax M GND (5) 1 Ax = Specific Device Code x = 5 or E M = Date Code = PbFree Package **Die Attach Pad on back of package (connect to ground) ORDERING INFORMATION Device Package Shipping NSPM8151MUTBG UDFN6 3000 / Tape & (PbFree) Reel NSPM8181MUTBG UDFN6 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2017 Rev. 1 NSPM8151/DNSPM8151, NSPM8181 PACKAGE / PINOUT DIAGRAMS Table 1. PIN DESCRIPTIONS 4Channel, 6Lead, UDFN8 Package Top View Bottom View (Pins Down View) (Pins Up View) Pin Name Type Description 12 3 4 6 5 1 V HV V HV ESD Channel CC DD 2 N/C No Connect XX M 3 N/C No Connect Pin 1 Marking 4 N/C No Connect 5 GND Ground 65 1 2 3 4 6 GND Ground 6Lead UDFN ELECTRICAL CHARACTERISTICS I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F V Forward Voltage I F F UniDirectional Surge Protection SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Operating Temperature Range 55 to +125 C Storage Temperature Range 65 to +150 C Peak Current (t = 8/20 s) NSPM8151 100 A p Peak Current (t = 8/20 s) NSPM8181 119 A p Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS V I C PP (Note 3) Breakdown Voltage (8 x 20 s) V (V) RWM V V (Note 2) I (mA) V (V) I (A) (Note 1) I V A) BR T C PP R RWM Device Marking Max Max Min Nom Max Max Device Name NSPM8151 A5 15 1 16 17.5 18.5 1 27 100 NSPM8181 A8 18 1 20 22.5 23.5 1 28 70 30 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. A surge protector is normally selected according to the working peak reverse voltage (V ), which should be equal to or greater than the RWM DC or continuous peak operating voltage level. 2. V measured at pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveform per Figure 1. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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