NSR01L30NXT5G ON Semiconductor

NSR01L30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active NSR01L30NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Total Power Dissipation T = 25C P 312 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 170 C/W JA Total Power Dissipation T = 25C P 735 mW A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR 4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 R (V = 30 V) 3.0 R Forward Voltage V V F (I = 10 mA) 0.40 F (I = 100 mA) 0.53 F Total Capacitance 7.0 pF CT (V = 5.0 V, f = 1 MHz) R