NSR05T30P2 500 mA, 30 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving www.onsemi.com micropackaging ideal for space constraint applications. Features Low Forward Voltage Drop 450 mV (Typ.) I = 500 mA F MARKING 2 DIAGRAM Low Reverse Current 40 A (Typ.) V = 30 V R 500 mA of Continuous Forward Current 1 YNM ESD Rating: Human Body Model: Class 3B SOD923 Charged Device Model: Class IV CASE 514AB High Switching Speed YN = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant Typical Applications LCD and Keypad Backlighting 1 2 Camera Photo Flash CATHODE ANODE Buck and Boost dcdc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Device Package Shipping MAXIMUM RATINGS Rating Symbol Value Unit NSR05T30P2T5G SOD923 2 mm Pitch (PbFree) 8000/Tape & Reel Reverse Voltage V 30 V R For information on tape and reel specifications, Forward Current (DC) I 500 mA F including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Forward Surge Current I 2.5 A FSM Brochure, BRD8011/D. (60 Hz 1 cycle) Repetitive Peak Forward Current I 1 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD > 8 kV Charged Device Model > 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2018 Rev. 0 NSR05T30P2/DNSR05T30P2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 345 C/W JA Total Power Dissipation T = 25C P 360 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 715 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 650 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 1000 D = 0.5 100 0.2 0.1 0.05 0.02 10 0.01 SINGLE PULSE 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 SINGLE PULSE 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 R(t) (C/W) R(t) (C/W)