C3D16065D1 V = 650 V RRM Silicon Carbide Schottky Diode I (T =147C) = 16 A F C Z -Rec Rectifier Q = 40 nC c Features Package 650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F TO-247-3 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C3D16065D1 TO-247-3 C3D16065D1 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Test Conditions Note V Repetitive Peak Reverse Voltage 650 V RRM V DC Blocking Voltage 650 V DC 43 T =25C C I Continuous Forward Current 20 A T =135C Fig. 3 F C 16 T =147C C 57 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 33 T -110C, t =10 ms, Half Sine Pulse C P 160 T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 148 T =110C, t =10 ms, Half Sine Pulse C P 173 T =25C C P Power Dissipation W Fig. 4 tot 75 T =110C C 128 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 110 T =110C, t =10 ms C P T , T Operating Junction and Storage Temperature -55 to +175 C J stg 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw C3D16065D1 Rev. -, 08-2019 1Electrical Characteristics Test Conditions Symbol Parameter Typ. Max. Unit Note I = 16 A T =25C 1.5 1.8 F J Fig. 1 V Forward Voltage V F I = 16 A T =175C 2.0 2.4 F J 18 95 V = 650 V T =25C R J Fig. 2 I Reverse Current A R 38 378 V = 650 V T =175C R J V = 400 V, I = 16 A R F 40 Fig. 5 Q Total Capacitive Charge nC C T = 25C J 740 V = 0 V, T = 25C, f = 1 MHz R J 74 V = 200 V, T = 25C, f = 1 MHz Fig. 6 C Total Capacitance pF R J 68 V = 400 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 6 J V = 400 V Fig. 7 C R Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note 0.86 Fig. 9 R Thermal Resistance from Junction to Case C/W JC Typical Performance 45 400 40 T = -55C 350 J T = 25C J 35 T = 75C J 300 T = 125C J 30 T = 175C J 250 T = 175 C J 25 200 T = 125 C J 20 150 T = 75 C J 15 T = 25 C J 100 10 T = -55 C J 5 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 200 400 600 800 1000 1200 Foward Voltage, V (V) VV (V) (V) VV (V) (V) F Reverse Voltage, V (V) FF RR R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics C3D16065D1 Rev. -, 08-2019 2 Foward Current, I (A) I (A) F I (A) F F Reverse Leakage Current, I (uA) I (A) RR I (A) R R