M G4 NSS35200CF8T1G 35 V, 7 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS35200CF8T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 35 45 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 55 65 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 5.0 7.0 E C Collector Cutoff Current I Adc CBO (V = 35 Vdc, I = 0) 0.03 0.1 CB E CollectorEmitter Cutoff Current I Adc CES (V = 35 Vdc) 0.03 0.1 CES Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.01 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 1.0 A, V = 2.0 V) 100 200 C CE (I = 1.5 A, V = 2.0 V) 100 200 400 C CE (I = 2.0 A, V = 2.0 V) 100 200 C CE CollectorEmitter Saturation Voltage (Note 4) V V CE(sat) (I = 0.1 A, I = 0.010 A) 0.10 C B (I = 1.0 A, I = 0.010 A) 0.15 C B (I = 2.0 A, I = 0.02 A) 0.30 C B BaseEmitter Saturation Voltage (Note 4) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.68 0.85 C B BaseEmitter Turnon Voltage (Note 4) V V BE(on) (I = 2.0 A, V = 3.0 V) 0.81 0.875 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 600 650 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 85 100 pF CB Turnon Time (V = 10 V, I = 100 mA, I = 1 A, R = 3 ) t 35 nS CC B1 C L on t 225 nS Turnoff Time (V = 10 V, I = I = 100 mA, I = 1 A, R = 3 ) CC B1 B2 C L off 4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%