NSS60601MZ4T3G ON Semiconductor

NSS60601MZ4T3G electronic component of ON Semiconductor
NSS60601MZ4T3G ON Semiconductor
NSS60601MZ4T3G Bipolar Transistors - BJT
NSS60601MZ4T3G Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSS60601MZ4T3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSS60601MZ4T3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NSS60601MZ4T3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Datasheet: NSS60601MZ4T3G Datasheet (PDF)
Price (USD)
1613: USD 0.1612 ea
Line Total: USD 260.02 
Availability : 0
  
QtyUnit Price
1613$ 0.1612

 NSS60601MZ4T3G More Buying Options & Price Grid(s)
Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.2405
8000$ 0.2402
12000$ 0.2337
20000$ 0.2335

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1613
Multiples : 1
QtyUnit Price
1613$ 0.1612

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.1591
8000$ 0.1591
16000$ 0.1591
20000$ 0.1591
60000$ 0.1591

Availability 0
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.657
10$ 0.8017
100$ 0.4474
500$ 0.3531
1000$ 0.2827
2500$ 0.2589

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.1996

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 44
Multiples : 1
QtyUnit Price
44$ 0.1674
100$ 0.1607

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 44
Multiples : 1
QtyUnit Price
44$ 0.4202
100$ 0.2236

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSS60601MZ4T3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSS60601MZ4T3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NSS60601MZ4 Low V Transistor, CE(sat) NPN, 60 V, 6.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) 155 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60601MZ4T1G SOT223 1,000 / Tape & Reel (Pb Free) NSV60601MZ4T1G* SOT223 1,000 / Tape & Reel (Pb Free) NSS60601MZ4T3G SOT223 4,000 / Tape & Reel (Pb Free) NSV60601MZ4T3G* SOT223 4,000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

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FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
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ON SEMICONDUCTOR
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