Product Information

NSS60601MZ4T3G

Product Image X-ON

Datasheet
ON Semiconductor Bipolar Transistors - BJT 60V6A LOW VCE(SAT) NPN
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1659 ea
Line Total: USD 0.1659

1 - Global Stock
Ships to you between
Fri. 16 Jun to Thu. 22 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1

Stock Image

NSS60601MZ4T3G
ON Semiconductor

1 : USD 0.1607
10 : USD 0.1575
100 : USD 0.1544
500 : USD 0.1544
1000 : USD 0.1544

Read More Specifications

     
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
RoHS - XON
Y Icon ROHS
Mounting Style
Smd/Smt
Package / Case
SOT - 223
Transistor Polarity
Npn
Configuration
Single
Maximum DC Collector Current
6 A
Collector- Emitter Voltage VCEO Max
60 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
2000 mW
Gain Bandwidth Product fT
100 Mhz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Qualification
Aec - Q101
Series
Nss60601mz4
Packaging
Reel
Dc Current Gain Hfe Max
150
Brand
On Semiconductor
Dc Collector/Base Gain Hfe Min
150
Maximum Power Dissipation
2000 mW
Factory Pack Quantity :
4000
Height
1.57 mm
Length
6.5 mm
Cnhts
8542319000
Hts Code
8541290075
Mxhts
85423999
Product Type
Bjts - Bipolar Transistors
Subcategory
Transistors
Taric
8542399000
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Additional Infomation About Product

NSS60601MZ4 Low V Transistor, CE(sat) NPN, 60 V, 6.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) 155 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60601MZ4T1G SOT223 1,000 / Tape & Reel (Pb Free) NSV60601MZ4T1G* SOT223 1,000 / Tape & Reel (Pb Free) NSS60601MZ4T3G SOT223 4,000 / Tape & Reel (Pb Free) NSV60601MZ4T3G* SOT223 4,000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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