DATA SHEET www.onsemi.com NPN General Purpose COLLECTOR 3 Transistor 1 NST3904F3T5G BASE The NST3904F3T5G device is a spin off of our popular 2 SOT23/SOT323/SOT563/SOT963 threeleaded device. It is EMITTER designed for general purpose amplifier applications and is housed in the SOT1123 surface mount package. This device is ideal for lowpower surface mount applications where board space is at a 3 premium. Features 2 11 h , 100300 FE Low V , 0.4 V SOT1123 CE(sat) CASE 524AA Reduces Board Space STYLE 1 This is a PbFree Device MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit 2 M Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO 2 = Device Code Emitter Base Voltage V 6.0 Vdc M = Date Code EBO Collector Current Continuous I 200 mAdc C THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Total Device Dissipation, T = 25C P 290 mW A D Derate above 25C (Note 1) 2.3 mW/C NST3904F3T5G SOT1123 8000 / Tape & Reel (PbFree) Thermal Resistance, R 432 C/W JA JunctiontoAmbient (Note 1) For information on tape and reel specifications, including part orientation and tape sizes, please Total Device Dissipation, T = 25C P 347 mW A D refer to our Tape and Reel Packaging Specifications Derate above 25C (Note 2) 2.8 mW/C Brochure, BRD8011/D. Thermal Resistance, 360 C/W R JA JunctiontoAmbient (Note 2) Thermal Resistance, R 143 C/W JL JunctiontoLead 3 (Note 2) Junction and Storage Temperature Range T , T 55 to C J stg +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. 100 mm 1 oz, copper traces. 2 2. 500 mm 1 oz, copper traces. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2021 Rev. 2 NST3904F3/DNST3904F3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 200 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Noise Figure (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) NF 5.0 dB CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 275 CC C s ns Fall Time (I = I = 1.0 mAdc) t 50 B1 B2 f 3. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 0.28 400 I /I = 10 C B 150C (5.0 V) 350 V = 150C CE(sat) 0.23 150C (1.0 V) 300 250 0.18 25C (5.0 V) 200 25C (1.0 V) 55C 25C 0.13 150 55C (5.0 V) 55C (1.0 V) 100 0.08 50 0 0.03 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V) h , DC CURRENT GAIN (V) FE